BC184C Просмотр технического описания (PDF) - New Jersey Semiconductor
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BC184C Datasheet PDF : 3 Pages
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J.s.tis.11
(X
U
, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BC182, A, B
BC183, A, B, C
BC184, B, C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
Ic
Power Dissipation at Ta=25°C
PD
Derate Above 25°C
Power Dissipation at TC=25°C
PD
Derate Above 25°C
Operating And Storage Junction
Temperature Range
Tj. Tstg
BC182
50
60
BC183
30
45
6.0
100
350
2.8
1.0
8.0
-55 to +150
THERMAL RESISTANCE
Junction to Case
R(h (j-c)
125
Junction to Ambient in free air
Rth (j-a)
357
ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
SYMBOL
VCEO
TEST CONDITION
lc=2mA, IB=0
MIN
BC182
50
Collector Base Voltage
BC183/BC184
30
VCBO
lc=10nA, IE=0
BC182
60
Emitter Base Voltage
BC183/BC184
45
VEBO
!E=100|jA, lc=0
6.0
Collector Cut Off Current
ICBO
VCB=50V, IE=0 BC182
VCB=30V, IE=0 BC183/184
Emitter Cut Off Current
IEBO
VEB=4V, lc=0
BC184
30
45
UNITS
V
V
V
mA
mW;
mW/°C
W
mW/°C
°C
°C/W
°C/W
TYP
MAX UNITS
V
V
V
V
V
15
nA
15
nA
15
nA
Quality Semi-Conductors
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