HYB3164405BJ-40 Просмотр технического описания (PDF) - Infineon Technologies

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производитель

HYB3164405BJ-40

16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

Infineon Technologies 

16M x 4-Bit Dynamic RAM

(4k & 8k Refresh, EDO-version)

HYB 3164405BJ/BT(L) -40/-50/-60

HYB 3165405BJ/BT(L) -40/-50/-60

Preliminary Information

• 16 777 216 words by 4-bit organization

• 0 to 70 °C operating temperature

• Hyper Page Mode - EDO - operation

• Performance:

-40 -50 -60

tRAC RAS access time

40

tCAC CAS access time

10

tAA Access time from address 20

tRC Read/write cycle time

69

tHPC Hyper page mode (EDO)

16

cycle time

50

60 ns

13

15 ns

25

30 ns

84 104 ns

20

25 ns

• Single + 3.3 V (± 0.3V) power supply

• Low power dissipation:

max. 306 active mW ( HYB 3164405BJ/BT(L)-40)

max. 252 active mW ( HYB 3164405BJ/BT(L)-50)

max. 216 active mW ( HYB 3164405BJ/BT(L)-60)

max. 486 active mW ( HYB 3165405BJ/BT(L)-40)

max. 396 active mW ( HYB 3165405BJ/BT(L)-50)

max. 324 active mW ( HYB 3165405BJ/BT(L)-60)

7.2 mW standby (LVTTL)

3.6 mW standby (LVMOS)

720 µA standby for L-version

• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),

RAS-only refresh, hidden refresh

• Self refresh (L-version only)

• 8192 refresh cycles/128 ms, 13 R/ 11C addresses (HYB 3164405BJ/BT)

4096 refresh cycles / 64 ms, 12 R/ 12C addresses (HYB 3165405BJ/BT)

• 128 msec refresh period for L-versions

• Plastic Package:

P-SOJ-32-1 400 mil HYB 3164(5)400BJ

P-TSOPII-32-1 400 mil HYB 3164(5)400BT(L)

Semiconductor Group

1

12.97

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