IRF9540(1999) Просмотр технического описания (PDF) - Fairchild Semiconductor
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IRF9540 Datasheet PDF : 7 Pages
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IRF9540, RF1S9540SM
Typical Performance Curves Unless Otherwise Specified (Continued)
1.15
ID = 250µA
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2000
1600
1200
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
800
COSS
400
CRSS
0
0
-10
-20
-30
-40
-50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12
TJ = -55oC
9
TJ = 25oC
6
TJ = 125oC
3
0
0
-20
-40
-60
-80
-100
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = 150oC
TJ = 25oC
10
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
ID = -19A
-5
-10
VDS = -20V
VDS = -50V
VDS = -80V
0
20
40
60
80
Qg(TOT), GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2001 Fairchild Semiconductor Corporation
IRF9540, RF1S9540SM Rev. A
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