IRF9540(1999) Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

IRF9540
(Rev.:1999)

19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

Fairchild Semiconductor 

IRF9540, RF1S9540SM

Source to Drain Diode Specifications

PARAMETER

Continuous Source to Drain Current

Pulse Source to Drain Current

(Note 3)

SYMBOL

I SD

ISDM

TEST CONDITIONS

Modified MOSFET Symbol

Showing the Integral Re-

verse

P-N Junction Diode

G

MIN TYP MAX UNITS

-

-

-19

A

D

-

-

-76

A

S

Source to Drain Diode Voltage (Note 2)

Reverse Recovery Time

Reverse Recovery Charge

V SD

t rr

Q RR

TC = 25oC, ISD = -19A, VGS = 0V (Figure 13)

TJ = 150oC, ISD = 19A, dISD/dt = 100A/µs

TJ = 150oC, ISD = 19A, dISD/dt = 100A/µs

-

-

-1.5

V

-

170

-

ns

-

0.8

-

µC

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 25V, starting TJ = 25oC, L = 4mH, RG = 25Ω, peak IAS = 19A. (Figures 15, 16).

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

0

0

25

50

75

100

125

150 175

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

-20

-20

-15

-10

-5

0

25

75

125

175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

1

0.5

0.2

0.1 0.1

0.05

0.02

0.01

0.0110-5

PDM

SINGLE PULSE

10-4

t1

t2

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x RθJC + TC

10-3

10-2

10-1

1

10

t1, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

©2001 Fairchild Semiconductor Corporation

IRF9540, RF1S9540SM Rev. A

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