IRF9540 Просмотр технического описания (PDF) - Harris Semiconductor

Номер в каталоге

Компоненты Описание

производитель

IRF9540

-15A and -19A, -80V and -100V, 0.20Ω and 0.30Ω, P-Channel Power MOSFETs

Harris Semiconductor 

IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM

Typical Performance Curves Unless Otherwise Specified

-20

1.2

1.0

0.8

0.6

0.4

0.2

0

0

25

50

75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION

TEMPERATURE DERATING CURVE

-20

IRF9540,

IRF9541

-15

IRF9542,

-10

IRF9543

-5

0

25

75

125

175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

1

0.5

0.2

0.1

0.1

0.05

0.02

0.01

SINGLE PULSE

0.01

10-5

10-4

10-3

PDM

t1

NOTES:

t2

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM RθJC x ZθJC + TC

10-2

10-1

1

10

t1, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL

IMPEDANCE

100 IRF9540, 1

IRF9542, 3

IRF9540, 1

10 IRF9542, 3

10µs

100µs

1ms

OPERATION IN THIS

AREA IS LIMITED

BY rDS(ON)

1

10ms

100ms

DC

TC

TJ

=

=

25oC

175oC

RθJC = 1.0oC/W

SINGLE PULSE

0.1 1

10

IRF9541, 3 IRF9540, 2

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

1000

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

-100

-80

VGS = -16V

PULSE DURATION = 80µs

-14V

-12V

-60

-40

-20

0

0

-10V

-9V

-8V

-7V

-6V

-5V

-4V

-10

-20

-30

-40

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 5. OUTPUT CHARACTERISTICS

-50 PULSE DURATION = 80µs

-16V

VGS = -14V

-40

-10V

-30

-9V

-8V

-20

-7V

-12V

-10

0

0

-6V

-5V

-4V

-2

-4

-6

-8

-10

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS

4

Share Link: