IRF9540 Просмотр технического описания (PDF) - Harris Semiconductor
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IRF9540 Datasheet PDF : 11 Pages
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IRF9540, IRF9541, IRF9542,
S E M I C O N D U C T O R IRF9543, RF1S9540, RF1S9540SM
January 1997
-15A and -19A, -80V and -100V, 0.20Ω and 0.30Ω,
P-Channel Power MOSFETs
Features
• -15A and -19A, -80V and -100V
• rDS(ON) = 0.20Ω and 0.30Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Description
The IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, and
RF1S9540SM are advanced power MOSFETs designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation.
These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and as drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Ordering Information
Symbol
PART NUMBER
PACKAGE
BRAND
IRF9540
TO-220AB
IRF9540
IRF9541
TO-220AB
IRF9541
IRF9542
TO-220AB
IRF9542
IRF9543
TO-220AB
IRF9543
RF1S9540
TO-262AA
RF1S9540
RF1S9540SM
TO-263AB
RF1S9540SM
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.
Formerly Developmental Type TA17521.
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
M
A
GATE
SOURCE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
1
File Number 2282.3
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