RF1K49221(1999) Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге

Компоненты Описание

производитель

RF1K49221
(Rev.:1999)

2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET™ Power MOSFET

Fairchild Semiconductor 

Data Sheet

RF1K49221

August 1999 File Number 4314.1

Title

F1K

221)

b-

t

5A,

V,

30

m,

D

ted,

al

Cha

el

-

FET

wer

OS-

T)

utho

2.5A, 60V, 0.130 Ohm, ESD Rated, Dual

N-Channel LittleFET™ Power MOSFET

The RF1K49221 Dual N-Channel power MOSFET is

manufactured using an advanced MegaFET process. This

process, which uses feature sizes approaching those of LSI

integrated circuits, gives optimum utilization of silicon,

resulting in outstanding performance. It is designed for use in

applications such as switching regulators, switching

converters, motor drivers, relay drivers, and low voltage bus

switches. This device can be operated directly from

integrated circuits.

The RF1K49221 incorporates ESD protection and is

designed to withstand 2kV (Human Body Model) of ESD.

Formerly developmental type TA49221.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RF1K49221

MS-012AA

RF1K49221

NOTE: When ordering, use the entire part number. For ordering in

tape and reel, add the suffix 96 to the part number, i.e. RF1K4922196.

ey-

rds

ter-

Features

• 2.5A, 60V

• rDS(ON) = 0.130Ω

• 2kV ESD Protected

• Temperature Compensating PSPICE® Model

• Thermal Impedance PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

S1(1)

G1(2)

D1(8)

D1(7)

S2(3)

G2(4)

D2(6)

D2(5)

rpo- Packaging

on,

D

ted,

al

Cha

el

-

FET

wer

JEDEC MS-012AA

BRANDING DASH

5

1

2

3

4

©2001 Fairchild Semiconductor Corporation

RF1K49221 Rev. A

Share Link: