IRF9630 Просмотр технического описания (PDF) - Fairchild Semiconductor
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IRF9630 Datasheet PDF : 7 Pages
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IRF9630, RF1S9630SM
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
I SD
ISDM
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction Diode
-
-
-6.5
A
D
-
-
-26
A
G
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
V SD
trr
Q RR
TJ = 25oC, ISD = -6.5A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs
-
-
-1.5
V
-
400
-
ns
-
2.6
-
µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 17.75mH, RG = 25Ω, peak IAS = 6.5A. (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-10
-8
-6
-4
-2
0
0
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2 t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2002 Fairchild Semiconductor Corporation
IRF9630, RF1S9630SM Rev. B
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