RF1K49224 Просмотр технического описания (PDF) - Fairchild Semiconductor

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RF1K49224

3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET™ Power MOSFET

Fairchild Semiconductor 

RF1K49224

Typical Performance Curves (P-Channel) (Continued)

-50

TJ = MAX RATED

TA = 25oC

-10

5ms

-1

10ms

-0.1

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

-0.01

-0.1

-1

VDSS(MAX) = -30V

-10

VDS, DRAIN TO SOURCE VOLTAGE (V)

100ms

1s

DC

-100

FIGURE 24. FORWARD BIAS SAFE OPERATING AREA

-15

If R = 0

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

-10 If R ≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

STARTING TJ = 25oC

STARTING TJ = 150oC

-1

0.1

1

10

100

tAV, TIME IN AVALANCHE (ms)

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 26. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

-100

VGS = -20V TA = 25oC

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

VGS = -10V

I = I25

150 - TA

125

-10

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

-1

10-5

10-4

10-3

10-2

10-1

100

101

t, PULSE WIDTH (s)

FIGURE 25. PEAK CURRENT CAPABILITY

-20 VGS = -20V

VGS = -10V

-16 VGS = -8V

-12

-8

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VGS = -7V

TA = 25oC

VGS = -6V

VGS = -5V

VGS = -4.5V

-4

0

0

-1.5

-3.0

-4.5

-6.0

-7.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 27. SATURATION CHARACTERISTICS

-20

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDD = -15V

-16

-55oC

25oC

-12

150oC

-8

-4

0

0

-2

-4

-6

-8

-10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 28. TRANSFER CHARACTERISTICS

500

400

300

200

ID = -0.625A

100

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDD = -15V

ID = -5.0A

ID = -2.5A

ID = -1.25A

0

-2

-4

-6

-8

-10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 29. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

©2001 Fairchild Semiconductor Corporation

RF1K49224 Rev. A

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