RF1K49224 Просмотр технического описания (PDF) - Fairchild Semiconductor
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RF1K49224
Fairchild Semiconductor
RF1K49224 Datasheet PDF : 15 Pages
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RF1K49224
P-Channel Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
BV DSS
V GS(TH)
I DSS
IGSS
rDS(ON)
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = -30V,
VGS = 0V
TA = 25oC
TA = 150oC
VGS = ±20V
ID = 2.5A
VGS = -10V
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(-10)
Qg(TH)
CISS
COSS
CRSS
RθJA
VGS = -4.5v
VDD = -15V, ID ≅ 2.5A,
RL = 6Ω, VGS = -10V,
RGS = 25Ω
VGS = 0V to -20V
VGS = 0V to -10V
VGS = 0V to -2V
VDD = -24V,
ID ≅ 2.5A,
RL = 9.6Ω
Ig(REF) = -1.0mA
VDS = -25V, VGS = 0V,
f = 1MHz
Pulse width = 1s
Device mounted on FR-4 material
P-Channel Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
Reverse Recovery Time
VSD
trr
ISD = -2.5A
ISD = -2.5A, dISD/dt = -100A/µs
Typical Performance Curves (N-Channel)
MIN
TYP
MAX UNITS
-30
-
-
V
-1
-
-3
V
-
-
-1
µA
-
-
-50
µA
-
-
100
nA
-
-
0.150
Ω
0.360
Ω
-
-
40
ns
-
9
-
ns
-
19
-
ns
-
60
-
ns
-
34
-
ns
-
-
140
ns
-
28
35
nC
-
15
19
nC
-
1.5
1.9
nC
-
580
-
pF
-
260
-
pF
-
38
-
pF
-
-
62.5
oC/W
MIN
TYP
MAX UNITS
-
-
-1.25
V
-
-
49
ns
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
©2001 Fairchild Semiconductor Corporation
RF1K49224 Rev. A
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