RF1K49224 Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
RF1K49224
Fairchild Semiconductor
RF1K49224 Datasheet PDF : 15 Pages
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RF1K49224
Absolute Maximum Ratings TA = 25oC Unless Otherwise Specified
N-CHANNEL
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
30
Drain to Gate Voltage (RGS= 20kΩ ) . . . . . . . . . . . . . . .VDGR
30
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
Drain Current
Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . .ID
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.5
Refer to Peak Current Curve
Refer to UIS Curve
2
0.016
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
-55 to 150
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . .Tpkg
260
P-CHANNEL
-30
-30
± 20
2.5
Refer to Peak Current Curve
Refer to UIS Curve
2
0.016
-55 to 150
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
N-Channel Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
BV DSS
V GS(TH)
I DSS
I GSS
r DS(ON)
t ON
t d(ON)
tr
t d(OFF)
tf
t OFF
Q g(TOT)
Q g(10)
Q g(TH)
C ISS
C OSS
C RSS
R θ JA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = 30V,
VGS = 0V
TA = 25oC
TA = 150oC
VGS = ±20V
ID = 3.5A
VGS = 10V
VGS = 4.5V
VDD = 15V, ID ≅ 3.5A,
RL = 4.29Ω, VGS = 10V,
RGS = 25Ω
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 24V,
ID ≅ 3.5A,
RL = 6.86Ω
Ig(REF) = 1.0mA
VDS = 25V, VGS = 0V,
f = 1MHz
Pulse width = 1s
Device mounted on FR-4 material
N-Channel Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
Reverse Recovery Time
V SD
t rr
ISD = 3.5A
ISD = 3.5A, dISD/dt = 100A/µs
MIN
TYP
MAX UNITS
30
-
-
V
1
-
3
V
-
-
1
µA
-
-
50
µA
-
-
100
nA
-
-
0.060
Ω
0.132
Ω
-
-
50
ns
-
10
-
ns
-
30
-
ns
-
60
-
ns
-
45
-
ns
-
-
130
ns
-
35
45
nC
-
13
17
nC
-
2.3
2.9
nC
-
575
-
pF
-
275
-
pF
-
100
-
pF
-
-
62.5
oC/W
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
45
ns
©2001 Fairchild Semiconductor Corporation
RF1K49224 Rev. A
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