RF2334 Просмотр технического описания (PDF) - RF Micro Devices

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RF2334

GENERAL PURPOSE AMPLIFIER

RF Micro Devices 

RF2334

Absolute Maximum Ratings

Parameter

Input RF Power

Operating Ambient Temperature

Storage Temperature

Rating

+13

-40 to +85

-60 to +150

Unit

dBm

°C

°C

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate

at the time of this printing. However, RF Micro Devices reserves the right to

make changes to its products without notice. RF Micro Devices does not

assume responsibility for the use of the described product(s).

Parameter

Specification

Unit

Min.

Typ.

Max.

Condition

Overall

Frequency Range

3dB Bandwidth

Gain

Gain Flatness

Noise Figure

Input VSWR

Output VSWR

Output IP3

Output P1dB

Reverse Isolation

Thermal

ThetaJC

Maximum Measured Junction

Temperature

Mean Time Between Failures

Power Supply

DC to 6000

2.5

19.4

18

16

14

13

±2

4.8

2.1:1

1.8:1

+33

+18.5

20.5

288

172

400

MHz

GHz

dB

dB

dB

dB

dB

dB

dBm

dBm

dB

°C/W

°C

years

T=25°C, ICC=65mA

Freq = 100 MHz

Freq = 1000 MHz

Freq =2000 MHz

Freq = 3000 MHz

Freq = 4000 MHz

100MHz to 2000MHz

Freq = 2000 MHz

In a 50Ω system, DC to 4000MHz

In a 50Ω system, DC to 4000MHz

Freq=1000MHz±50kHz, PTONE=-10dBm

Freq =1000 MHz

Freq =2000 MHz

ICC=65mA, PDISS=300mW (See Note.)

TAMB=+85°C, VPIN=4.64V

See Note.

With 22Ω bias resistor

Device Operating Voltage

4.8

V

At pin 5 with ICC=65mA

Supply Voltage

6.3

V

At evaluation board connector, ICC=65mA

Operating Current

65

68

mA

See note.

Note: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should

be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 68mA over all intended operating

conditions.

4-272

Rev A10 030415

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