RF2128P Просмотр технического описания (PDF) - RF Micro Devices
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RF2128P Datasheet PDF : 4 Pages
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• PCS Communication Systems
• 2.5GHz ISM Band Applications
• Wireless LANs
RF2128P
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
2
The RF2128P is a medium-power, high-efficiency, linear
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in 2.45GHz ISM applications such as WLAN
and POS terminals. The part also will function as the final
stage in digital PCS phone transmitters requiring linear
amplification operating between 1900MHz and
2200MHz, with over 100mW transmitted power, or as the
driver stage for the RF2125 high power amplifier. A sim-
ple power down function is included for TDD operation.
The part is packaged in a low-cost plastic package with a
metal backside.
Si BJT
GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
VCC2 1
GND1 2
BIAS
CIRCUITS
8 VCC1
7 RF OUT
PD 3
6 RF OUT
RF IN 4
5 GND 2
PACKAGE BASE
GND
.157
.150
1
.196
.189
.244
.230
8°MAX
0°MIN
.019
.014
.050
.003
.001
.061
.055
EXPOSED
HEATSINK
.123
.107
.087
.071
.035 .010
.016 .007
Refer to “Handling of PSOP and PSSOP Products” on page 16-15
for special handling information.
!
• Single 3.0V to 6.5V Supply
• 100mW Linear Output Power
• 28dB Small Signal Gain
• 33% Efficiency
• Digitally Controlled Power Down Mode
• 1900MHz to 2500MHz Operation
RF2128P
Medium Power Linear Amplifier
RF2128P PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 990216
2-89
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