RF2046 Просмотр технического описания (PDF) - RF Micro Devices

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RF2046

GENERAL PURPOSE AMPLIFIER

RF Micro Devices 

RF2046

Preliminary

Absolute Maximum Ratings

Parameter

Supply Current

Input RF Power

Operating Ambient Temperature

Storage Temperature

Rating

75

+15

-40 to +85

-60 to +150

Unit

mA

dBm

°C

°C

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate

at the time of this printing. However, RF Micro Devices reserves the right to

make changes to its products without notice. RF Micro Devices does not

assume responsibility for the use of the described product(s).

Parameter

Specification

Unit

Min.

Typ.

Max.

Condition

Overall

4

Frequency Range

Gain

DC to 3000

22.9

22.2

18

20.8

19.2

Gain Flatness

±1.1

Noise Figure

3.8

Input VSWR

1.7:1

Output VSWR

1.7:1

Output IP3

Output P1dB

Reverse Isolation

+23

+12.1

23.2

Thermal

ThetaJC

199

Maximum junction temperature

109

Mean Time Between Failures

2.0 x 104

Mean Time Between Failures

1.4 x 107

Mean Time Between Failures

5.3 x 1011

Power Supply

MHz

dB

dB

dB

dB

dB

dB

dBm

dBm

dB

°C/W

°C

years

years

years

T=25 °C, VD=3.5V, ICC=35mA

Freq = 100 MHz

Freq = 1000 MHz

Freq =2000 MHz

Freq = 3000 MHz

100MHz to 2000MHz

Freq = 2000 MHz

In a 50Ω system, DC to 3000MHz

In a 50Ω system, DC to 3000MHz

Freq=2000MHz±100kHz, PTONE=-18dBm

Freq =2000 MHz

Freq =2000 MHz

ICC=35mA, PDISS=120mW

TAMB = +85 °C

TAMB = +25 °C

TAMB = -40 °C

With 22Ω bias resistor

Operating Voltage

Operating Current

3.0

3.5

4.0

V

At pin 3 with ICC=35mA

35

mA

4-20

Rev A5 010110

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