ACS108-6SA Просмотр технического описания (PDF) - STMicroelectronics
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ACS108-6SA Datasheet PDF : 13 Pages
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ACS108-6SA
Characteristics (curves)
Figure 5. Relative variation of IGT and VGT versus junction Figure 6. Surge peak on-state current versus number of
temperature
cycles
3.5 IGT, VGT [Tj] / IGT, VGT, [ Tj=25 °C]
3.0
IGT Q2
2.5
IGT Q3
2.0
1.5
1.0
VGT Q2-Q3
0.5
0.0
-50
-25
0
Tj(°C)
25
50
75
100
125
14 ITSM(A)
13
12
11
10
9
8
7
6
5
4
3
2
TO-92
Repetitive
1 Tlead = 76 °C
0
1
Non repetitive
Tj initial=25 °C
t=20ms
One cycle
Number of cycles
10
100
1000
Figure 7. Non repetitive surge peak on-state current for a
sinusoidal pulse
1.E+03 ITSM(A)
1.E+02
Sinusoidal pulse,
tp < 10 ms
ITSM
Tj initial = 25 °C
1.E+01
1.E+00
1.E-01
0.01
0.10
t p(ms)
1.00
10.00
Figure 8. On-state characteristics (maximum values)
100.00 ITM(A)
10.00
1.00
Tj=125 °C
Tj=25 °C
0.10
0.0 0.5 1.0 1.5 2.0
VTM(V)
2.5 3.0
Tj max.:
Vto= 0.85 V
Rd= 300 mΩ
3.5 4.0 4.5
Figure 9. Relative variation of critical rate of decrease of
Figure 10. Relative variation of static dV/dt immunity
main current versus junction temperature
versus junction temperature (typical values above 5kV/µs)
(dI/dt) c [Tj] / (dI/dt)c [Tj =125 °C]
2.5
2.0
1.5
1.0
0.5
Tj (°C)
0.0
25 35 45 55 65 75 85 95 105 115 125
5 dV/dt [ Tj] / dV/dt [ T j=125°C]
4
3
2
1
Tj(°C)
0
25
50
75
VD=VR=402V
100
125
DS1641 - Rev 6
page 5/13
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