BC818W Просмотр технического описания (PDF) - Diotec Semiconductor Germany

Номер в каталоге

Компоненты Описание

производитель

BC818W

SMD General Purpose NPN Transistors

Diotec Semiconductor Germany  

BC817W ... BC818W

Characteristics 2)

DC current gain – Kollektor-Basis-Stromverhältnis 1)

Tj = 25°C

VCE = 1 V, IC = 100 mA

Group -16

Group -25

hFE

Group -40

VCE = 1 V, IC = 500 mA

hFE

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 4)

IC = 500 mA, IB = 50 mA

Base-Emitter-voltage – Basis-Emitter-Spannung 1)

VCEsat

VCE = 1 V, IC = 500 mA

VBE

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 20 V, (E open)

ICBO

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 5 V, (C open)

IEBO

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

Thermal resistance junction to ambient

Wärmewiderstand Sperrschicht – Umgebung

RthA

Min.

Kennwerte 2)

Typ.

Max.

100

–

250

160

–

400

250

–

600

40

–

–

–

–

0.7 V

–

–

1.2 V

–

–

100 nA

–

–

100 nA

100 MHz

–

–

–

–

5 pF

< 625 K/W .2)

120

[%]

100

80

60

40

20

Ptot

0

0 TA 50

100

150 [°C]

Power dissipation versus ambient temperature 1)

Verlustleistung in Abh. von d. Umgebungstemp.1)

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

http://www.diotec.com/

© Diotec Semiconductor AG

Share Link: