BB305C Просмотр технического описания (PDF) - Renesas Electronics

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производитель

BB305C

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Renesas Electronics 

BB305C

Main Characteristics

Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG)

VG2

Gate 2

RG

VG1

Gate 1

Drain

A

ID

Source

200MHz Power Gain, Noise Figure Test Circuit

VT

1000p

VG2

1000p

VT

1000p

Input(50Ω)

1000p

1000p

47k

47k

BBFET

L1

36p

1000p

1SV70

RG 82k

47k

L2

1000p

Output(50Ω)

10p max

RFC

1SV70

1000p

VD = VG1

L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns

L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns

RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns

Unit Resistance (Ω)

Capacitance (F)

Rev.6.00 Aug 10, 2005 page 3 of 9

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