BB302M Просмотр технического описания (PDF) - Renesas Electronics
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BB302M Datasheet PDF : 10 Pages
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BB302M
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 9 V
20
RG = 100 kΩ
f = 1 kHz
15
6V
5V
4V
3V
10
2V
5
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 9 V
20
RG = 150 kΩ
f = 1 kHz
15
10
6V 5V 4V
3V
2V
5
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage VG1 (V)
Noise Figure vs. Gate Resistance
4
VDS = 9 V
VG1 = 9 V
3 VG2S = 6 V
f = 200 MHz
2
1
0
10 20
50 100 200 500 1000
Gate Resistance RG (kΩ)
Rev.4.00 Aug 10, 2005 page 5 of 9
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 9 V
20
RG = 120 kΩ
f = 1 kHz
15
6V
5V
4V
3V
10
2V
5
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage VG1 (V)
Power Gain vs. Gate Resistance
30
25
20
15
10 VDS = 9 V
VG1 = 9 V
5 VG2S = 6 V
f = 200 MHz
0
10 20 50
100 200
500 1000
Gate Resistance RG (kΩ)
Power Gain vs. Drain Current
30
25
20
15
10
VDS = 9 V
VG1 = 9 V
VG2S = 6 V
5 RG = variable
f = 200 MHz
0
5 10 15 20 25 30
Drain Current ID (mA)
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