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BB302M Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание
производитель
BB302M Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
BB302M
Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain Current vs.
Gate2 to Source Voltage
25
68 k
20
82 k
15
100 k
120 k
10
150 k
180 k
200 k
5
RG = 220 k
VDS = VG1 = 9 V
0
1.2 2.4 3.8 4.8 6.0
Gate2 to Source Voltage VG2S (V)
Drain Current vs. Gate1 Voltege
20
VDS = 9 V
16 RG = 120 k
6V
5V
12
4V
8
3V
2V
4
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage VG1 (V)
Rev.4.00 Aug 10, 2005 page 4 of 9
Typical Output Characteristics
25
VG2S = 6 V
20 VG1 = V
15
10
1102110522800k00kkkkΩΩΩΩ
5
RG = 270 k
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain Current vs. Gate1 Voltage
20
VDS = 9 V
6V
16 RG = 100 k
5V
4V
12
3V
2V
8
4
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage VG1 (V)
Drain Current vs. Gate1 Voltege
20
VDS = 9 V
16 RG = 150 k
6V
12
5V
4V
8
3V
2V
4
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage VG1 (V)

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