BB302M Просмотр технического описания (PDF) - Renesas Electronics

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производитель

BB302M

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Renesas Electronics 

BB302M

Absolute Maximum Ratings

Item

Drain to source voltage

Gate1 to source voltage

Gate2 to source voltage

Drain current

Channel power dissipation

Channel temperature

Storage temperature

Symbol

VDS

VG1S

VG2S

ID

Pch

Tch

Tstg

Ratings

12

+10

–0

±10

25

150

150

–55 to +150

(Ta = 25°C)

Unit

V

V

V

mA

mW

°C

°C

Electrical Characteristics

Item

Drain to source breakdown voltage

Gate1 to source breakdown voltage

Gate2 to source breakdown voltage

Gate1 to source cutoff current

Gate2 to source cutoff current

Gate1 to source cutoff voltage

Gate2 to source cutoff voltage

Drain current

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Power gain

Noise figure

(Ta = 25°C)

Symbol Min Typ Max Unit

Test conditions

V(BR)DSS

V(BR)G1SS

V(BR)G2SS

IG1SS

IG2SS

VG1S(off)

12

+10

±10

—

—

0.4

—

—

—

—

—

—

— +100

— ±100

—

1.0

VG2S(off)

0.4

—

1.0

ID(op)

9

13

18

|yfs|

15

20

—

Ciss

Coss

Crss

2.2

3.0

4.0

0.8

1.1

1.5

— 0.017 0.04

V

ID = 200 µA, VG1S = VG2S = 0

V

IG1 = +10 µA, VG2S = VDS = 0

V

IG2 = ±10 µA, VG1S = VDS = 0

nA VG1S = +9 V, VG2S = VDS = 0

nA VG2S = ±9 V, VG1S = VDS = 0

V VDS = 9 V, VG2S = 6 V

ID = 100 µA

V VDS = 9 V, VG1S = 9 V

ID = 100 µA

mA VDS = 9 V, VG1 = 9 V

VG2S = 6 V, RG = 120 kΩ

mS VDS = 9 V, VG1 = 9 V, VG2S = 6 V

RG = 120 kΩ, f = 1 kHz

pF VDS = 9 V, VG1 = 9 V

pF VG2S = 6 V, RG = 120 kΩ

pF f = 1 MHz

PG

22

26

—

dB VDS = 9 V, VG1 = 9 V, VG2S = 6 V

NF

—

1.7

2.2

dB RG = 120 kΩ, f = 200 MHz

Rev.4.00 Aug 10, 2005 page 2 of 9

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