BB102M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

BB102M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi -> Renesas Electronics 

Noise Figure vs. Drain Current

4

3

2

V DS = 9 V

1 V G1= 9 V

V G2S = 6 V

RG= variable

f = 900 MHz

0 5 10 15 20 25 30 35 40

Drain Current I D (mA)

BB102M

Drain Current vs. Gate Resistance

40

V DS = 9 V

V G1= 9 V

V G2S = 6 V

30

20

10

0

10 20

50 100 200 500 1000

Gate Resistance R G (k Ω)

Gain Reduction vs.

Gate2 to Source Voltage

50

V DS = 9 V

40

V G1= 9 V

V G2S = 6 V

30

RG= 560 k Ω

f = 900 MHz

20

10

0 1 2 34 5 6 7

Gate2 to Source Voltage V G2S (V)

Input Capacitance vs.

Gate2 to Source Voltage

3

2

1

V DS = 9 V

V G1= 9 V

RG= 560 k Ω

f = 1 MHz

0

1 2 3 4 56

Gate2 to Source Voltage V G2S (V)

7

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