BB102M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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производитель
BB102M Datasheet PDF : 11 Pages
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Drain Current vs. Gate1 Voltege
20
V DS = 9 V
16 R G = 560 k Ω
6V
12
5 4 VV
3V
8
2V
4
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage VG1 (V)
BB102M
Drain Current vs. Gate1 Voltege
20
V DS = 9 V
R G = 680 k Ω
16
12
6V
54VV
3V
8
2V
4
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
6V
5V
20
4V
3V
15
2V
10
V DS = 9 V
R G = 470 k Ω
5
f = 1 kHz
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
20
6
V
5
V
4
V
3
V
15
2V
10
V DS = 9 V
R G = 560 k Ω
5
f = 1 kHz
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V G1 (V)
5
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