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BB102C Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
BB102C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
BB102C Datasheet PDF : 13 Pages
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Drain Current vs. Gate1 Voltege
20
V
DS
= 9 V
16
R
G
= 560 k
Ω
6V
12
5
4
VV
3V
8
2V
4
V
G2S
= 1 V
0
2
4
6
8
10
Gate1 Voltage V
G1
(V)
BB102C
Drain Current vs. Gate1 Voltege
20
V
DS
= 9 V
R
G
= 680 k
Ω
16
12
6V
54VV
3V
8
2V
4
V
G2S
= 1 V
0
2
4
6
8
10
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
6V
5V
20
4V
3V
15
2V
10
V
DS
= 9 V
R
G
= 470 k
Ω
5
f = 1 kHz
V
G2S
= 1 V
0
2
4
6
8
10
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
20
6
V5
V
4
V
3
V
15
2V
10
V
DS
= 9 V
R
G
= 560 k
Ω
5
f = 1 kHz
V
G2S
= 1 V
0
2
4
6
8
10
Gate1 Voltage V
G1
(V)
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