BB102C Просмотр технического описания (PDF) - Renesas Electronics

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производитель

BB102C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Electronics 

BB102C

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate1 to source voltage

Symbol

VDS

VG1S

Gate2 to source voltage

Drain current

Channel power dissipation

Channel temperature

Storage temperature

VG2S

ID

Pch

Tch

Tstg

Electrical Characteristics (Ta = 25°C)

Ratings

Unit

12

V

+10

V

–0

±10

V

25

mA

100

mW

150

°C

–55 to +150

°C

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS 12

Gate1 to source breakdown V(BR)G1SS +10

voltage

Gate2 to source breakdown V(BR)G2SS ±10

voltage

Gate1 to source cutoff current IG1SS

—

Gate2 to source cutoff current IG2SS

—

Gate1 to source cutoff voltage VG1S(off) 0.1

Gate2 to source cutoff voltage VG2S(off) 0.5

Drain current

I D(op)

10

Forward transfer admittance |yfs|

16

Input capacitance

c iss

1.2

Output capacitance

c oss

0.7

Reverse transfer capacitance crss

—

Power gain

PG

16

Noise figure

NF

—

Typ Max Unit Test Conditions

—

—

V

ID = 200µA, VG1S = VG2S = 0

—

—

V

IG1 = +10µA, VG2S = VDS = 0

—

—

V

IG2 = ±10µA, VG1S = VDS = 0

—

+100 nA

—

±100 nA

—

0.8 V

—

1.1 V

15

20

mA

21

—

mS

1.6 2.2 pF

1.1 1.5 pF

0.011 0.03 pF

20

—

dB

2.1 3.1 dB

VG1S = +9V, VG2S = VDS = 0

VG2S = ±9V, VG1S = VDS = 0

VDS = 9V, VG2S = 6V, ID = 100µA

VDS = 9V, VG1S = 9V, ID = 100µA

VDS = 9V, VG1 = 9V, VG2S = 6V

RG = 560kΩ

VDS = 9V, VG1 = 9V, VG2S =6V

RG = 560kΩ, f = 1kHz

VDS = 9V, VG1 = 9V

VG2S =6V, RG = 560kΩ

f = 1MHz

VDS = 9V, VG1 = 9V, VG2S =6V

RG = 120kΩ, f = 900MHz

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