K2719(2006) Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
K2719 Datasheet PDF : 6 Pages
| |||
2SK2719
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 720 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1.5 A
VDS = 20 V, ID = 1.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
⎯
⎯
±10
μA
±30 ⎯
⎯
V
⎯
⎯
100
μA
900 ⎯
⎯
V
2.0
⎯
4.0
V
⎯
3.7 4.3
Ω
0.65 2.6
⎯
S
⎯ 750 ⎯
pF
⎯
10
⎯
pF
⎯
70
⎯
pF
tr
10 V
VGS
ton
0V
tf
⎯
15
⎯
ID = 1.5 A
VOUT
⎯
55
⎯
ns
VDD ∼− 200 V
⎯
30
⎯
toff
Duty <= 1%, tw = 10 μs
⎯ 110 ⎯
Qg
VDD ∼− 400 V, VGS = 10 V, ID = 3 A
Qgs
Qgd
⎯
25
⎯
nC
⎯
13
⎯
nC
⎯
12
⎯
nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 3 A, VGS = 0 V
IDR = 3 A, VGS = 0 V
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
3
A
⎯
⎯
9
A
⎯
⎯
−1.9
V
⎯ 1100 ⎯
ns
⎯
7.5
⎯
μC
Marking
TOSHIBA
K2719
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-10
Share Link: 