RMPA2450-58 Просмотр технического описания (PDF) - Raytheon Company

Номер в каталоге

Компоненты Описание

производитель

RMPA2450-58

2.4-2.5 GHz GaAs MMIC Power Amplifier

Raytheon Company 

RMPA2450-58

2.4-2.5 GHz GaAs MMIC Power Amplifier

Test Procedure

for the evaluation board

(RMPA2450-58-TB)

PRODUCT INFORMATION

CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2) WHILE DRAIN VOLTAGES (VD1,VD2) ARE PRESENT MAY

DAMAGE THE AMPLIFIER.

The following sequence of procedure must be followed to properly test the power amplifier:

Step 1: Turn off RF input power.

Step 2: Use GND terminal of the evaluation board for

DC supplies. Apply gate supply voltages of

typical -0.5 V to evaluation board terminals Vgg.

Step 3: Apply drain supply voltages of +4.8 V to

evaluation board terminals Vdd. Adjust gate

supply voltage, if needed, to set the desired

quiescent bias currents Idq (or to the values as

shown on the data summary accompanying the

product samples).

Step 4: After the bias condition is established, RF input

signal may now be applied.

Step 5: Follow turn-off sequence of:

(i) Turn off RF Input Power

(ii)Turn down and off Vdd

(iii) Turn down and off Vgg

PARTS LIST

for Test

Evaluation Board

(RMPA2450-58-TB),

G654220

Part

C1, C2

C3, C4

C5, C6

U1

P1, P2, P3

J1, J2

Board

Value

330 pF

1000 pF

4.75 uF

RMPA2450-58

Terminals

SMA Connectors

FR4

Size (L”xW”)

.04” x .02”

.04” x .02”

.14” x .11”

.28” x .28” x .07

Vendors

AVX, Murata, Novacap,

AVX, Murata, Novacap

Sprague, ATC, AVX, Murata,

Raytheon

Samtec

E.F. Johnson

Raytheon Dwg# G654216

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

Revised March 30, 2000

Page 4

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Share Link: