RMPA2450-58 Просмотр технического описания (PDF) - Raytheon Company
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RMPA2450-58 Datasheet PDF : 5 Pages
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RMPA2450-58
2.4-2.5 GHz GaAs MMIC Power Amplifier
PRODUCT INFORMATION
Application
Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
The following briefly describes a procedure for evaluating the high efficiency PHEMT amplifier packaged in a
surface mount package. It may be noted that the chip is a fully monolithic amplifier for ISM band applications.
Figure 1 shows the functional block diagram of the packaged product.
Test Fixture
Figure 1 shows the outline and pin-out descriptions for the packaged device. A typical test fixture schematic
showing external bias components is shown in figure 3. Figure 4 shows typical layout of an evaluation board
corresponding to the schematic diagram. The following should be noted:
(1) Package pin designations are as shown in figure 2.
(2) Vg1, Vg2 are the Gate Voltages (negative) applied
at the pins of the package
(3) Vgg1=Vgg2=Vgg is the negative supply voltage at
the evaluation board terminal
(4) Vd1, Vd2 are the Drain Voltages (positive) applied
at the pins of the package
(5) Vdd1=Vdd2=Vdd is the positive supply voltage at
the evaluation board terminal
Figure 1
Package Outline and
Pin Designations
Dimensions in inches
A
0.030
TOP VIEW
0.200 SQ.
6 54
BOTTOM VIEW
45 6
7
3
8
Raytheon
RMPA
2450
0.015
2
9
1
10
12
11
PLASTIC LID
3
7
2
8
1
9
12
10 0.041
11
0.010
0.230
0.246
0.282
SIDE SECTION
Pin # Description
1 GND
2 RF Out
3 GND
4 Vd2
5 Vd1
6 GND
7 GND
8 RF In
9 GND
10 Vg1
11 Vg2
12 GND
13 GND
(PACKAGE BASE)
Figure 2
Functional Block
Diagram of
Packaged Product
Vd1
Pin# 5
Vd2
Ground
Pin# 4 Pin# 1, 3, 6, 7, 9, 12, 13
RF IN
Pin# 8
RF OUT
Pin# 2
www.raytheon.com/micro
Vg1
Pin# 10
Vg2
Pin# 11
Characteristic performance data and specifications are subject to change without notice.
Revised March 30, 2000
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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