IS61SF12832-12BI Просмотр технического описания (PDF) - Integrated Circuit Solution Inc

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производитель

IS61SF12832-12BI

128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM

Integrated Circuit Solution Inc 

15$5. &!

15$5. &!$

INTERLEAVED BURST ADDRESS TABLE (MODE = V++3 or No Connect)

External Address

A1 A0

00

01

10

11

1st Burst Address

A1 A0

01

00

11

10

2nd Burst Address

A1 A0

10

11

00

01

3rd Burst Address

A1 A0

11

10

01

00

LINEAR BURST ADDRESS TABLE (MODE = GND)

0,0

A1’, A0’ = 1,1

0,1

1,0

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

TBIAS

Temperature Under Bias

TSTG

Storage Temperature

PD

Power Dissipation

IOUT

Output Current (per I/O)

VIN, VOUT Voltage Relative to GND for I/O Pins

VIN

Voltage Relative to GND for

for Address and Control Inputs

Value

Unit

-40 to +85

oC

-55 to +150

oC

1.6

W

100

mA

-0.5 to VCCQ + 0.3 V

-0.5 to VCC + 0.5 V

VCC

Voltage on Vcc Supply Relatiive to GND

-0.5 to 4.6

V

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of

the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating condi-

tions for extended periods may affect reliability.

2. This device contains circuity to protect the inputs against damage due to high static

voltages or electric fields; however, precautions may be taken to avoid application of any

voltage higher than maximum rated voltages to this high-impedance circuit.

3. This device contains circuitry that will ensure the output devices are in High-Z at power up.

6

Integrated Circuit Solution Inc.

SSR014-0C

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