AD1990
SPECIFICATIONS
Test conditions, unless otherwise specified.
Table 1.
Parameter
SUPPLY VOLTAGES
AVDD
DVDD
PVDD
AMBIENT TEMPERATURE
LOAD IMPEDANCE
CLOCK FREQUENCY
PGA GAIN
MEASUREMENT BANDWIDTH
Ratings
5V
5V
12 V
25°C
6Ω
12.288 MHz
0 dB
20 Hz to 20 kHz
Table 2.
Parameter
RDS-ON
Per High-Side Transistor
Per Low-Side Transistor
MAXIMUM CURRENT THROUGH OUTx
THERMAL WARNING ACTIVE
THERMAL SHUTDOWN ACTIVE
RESTORE TEMPERATURE AFTER THERMAL SHUTDOWN
Min Typ Max Unit Test Conditions/Comments
260 355 mΩ T = 25°C
210 265 mΩ T = 25°C
5
A
Peak
135
°C
Die temperature
150
°C
Die temperature
120
°C
Die temperature
Table 3. Performance Specifications
Parameter
TOTAL HARMONIC DISTORTION AND NOISE (THD + N)
SIGNAL-TO-NOISE RATIO (SNR)
DYNAMIC RANGE (DNR)
CROSSTALK (LEFT-TO-RIGHT OR RIGHT-TO-LEFT)
Typ
0.003
0.006
0.01
0.02
102
102
−100
Unit Test Conditions/Comments
% PGA = 0 dB, PO = 1 W, 1 kHz
% PGA = 6 dB, PO = 1 W, 1 kHz
% PGA = 12 dB, PO = 1 W, 1 kHz
% PGA = 18 dB, PO = 1 W, 1 kHz
dB 1 kHz, A-weighted, 0 dB referred to 1% THD + N output
dB 1 kHz, A-weighted, −60 dB referred to 1% THD + N output
dB PGA = 0 dB, PO = 5 W, 1 kHz
Table 4. DC Specifications
Parameter
Typ
Unit
Test Conditions/Comments
INPUT IMPEDANCE
20
kΩ
AINL, AINR input pins
OUTPUT DC OFFSET
±4
mV
Independent of PGA setting
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