HUFA75852G3_F085 Просмотр технического описания (PDF) - Fairchild Semiconductor
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HUFA75852G3_F085 Datasheet PDF : 7 Pages
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HUFA75852G3_F085
Typical Performance Curves (Continued)
1000
100
100µs
10 OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
1
10
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
100
1ms
10ms
500
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
1000
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
STARTING TJ = 150oC
STARTING TJ = 25oC
10
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
150
100
50
TJ = 175oC
TJ = 25oC
TJ = -55oC
0
2
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.2
1.6
1.0
0.4
-80
VGS = 10V, ID = 75A
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2011 Fairchild Semiconductor Corporation
200
VGS = 20V
150
100
VGS = 10V
VGS = 7V
VGS = 6V
VGS =5V
50
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
1
2
3
4
5
6
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
HUFA75852G3_F085 Rev. C1
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