75829D Просмотр технического описания (PDF) - Fairchild Semiconductor
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75829D Datasheet PDF : 10 Pages
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HUF75829D3, HUF75829D3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 140V, VGS = 0V
VDS = 135V, VGS = 0V, TC = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 18A, VGS = 10V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
RθJC
RθJA
TO-251 and TO-252
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
VDD = 75V, ID = 18A
VGS = 10V,
RGS = 10Ω
(Figures 18, 19)
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain "Miller" Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 75V,
ID = 18A,
Ig(REF) = 1.0mA
(Figures 13, 16, 17)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
ISD = 18A
ISD = 9A
ISD = 18A, dISD/dt = 100A/µs
ISD = 18A, dISD/dt = 100A/µs
©2001 Fairchild Semiconductor Corporation
MIN TYP MAX UNITS
150
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100 nA
2
-
4
V
-
0.0925 0.110
Ω
-
-
1.36 oC/W
-
-
100 oC/W
-
-
58
ns
-
8.5
-
ns
-
30
-
ns
-
53
-
ns
-
30
-
ns
-
-
125
ns
-
58
70
nC
-
31
37
nC
-
2.1
2.5
nC
-
4.6
-
nC
-
11
-
nC
-
1080
-
pF
-
260
-
pF
-
90
-
pF
MIN TYP MAX UNITS
-
-
1.25
V
-
-
1.00
V
-
-
155
ns
-
-
800
nC
HUF75829D3, HUF75829D3S Rev. B
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