HI5735 Просмотр технического описания (PDF) - Renesas Electronics
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HI5735 Datasheet PDF : 11 Pages
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HI5735
Die Characteristics
DIE DIMENSIONS:
161.5 mils x 160.7 mils x 19 mils 1 mil
METALLIZATION:
Type: AlSiCu
Thickness: M1 - 8kÅ, M2 - 17kÅ
Metallization Mask Layout
PASSIVATION:
Type: Sandwich Passivation Undoped Silicon Glass
(USG) + Nitride
Thickness: USG - 8kÅ, Nitride - 4.2kÅ
Total 12.2kÅ +2kÅ
DIE ATTACH:
Silver Filled Epoxy
SUBSTRATE POTENTIAL (POWERED UP):
VEED
HI5735
D8
D9 D10 D11
DGND
D7
D6
D5
D4
D3
D2
D1
D0
CTRL OUT
CTRL IN
RSET
AVEE
IOUT
IOUT
ARTN
CLK DVCC DGND
DVEE
FN4133 Rev 4.00
May 2003
Page 10 of 11
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