G5N120CN Просмотр технического описания (PDF) - Fairchild Semiconductor
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G5N120CN Datasheet PDF : 7 Pages
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HGTP5N120CN, HGT1S5N120CNS
Typical Performance Curves Unless Otherwise Specified (Continued)
2.0
1.5
CIES
1.0
FREQUENCY = 1MHz
0.5
COES
0
CRES
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
7
DUTY CYCLE < 0.5%, TC = 110oC
6 250µs PULSE TEST
VGE = 15V
5
4
VGE = 10V
3
2
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
100
0.50
0.20
0.10
10-1
0.05
0.02
0.01
10-120-5
SINGLE PULSE
10-4
t1
DUTY FACTOR, D = t1 / t2
PD
PEAK TJ = (PD X ZθJC X RθJC) + TC
t2
10-3
10-2
10-1
100
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRD4120
RG = 25Ω
L = 5mH
+
-
VDD = 960V
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
VGE
VCE
ICE
90%
EOFF
10%
EON2
90%
10%
td(OFF)I tfI
trI
td(ON)I
FIGURE 19. SWITCHING TEST WAVEFORMS
HGTP5N120CN, HGT1S5N120CNS Rev. B
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