G5N120CN Просмотр технического описания (PDF) - Fairchild Semiconductor
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G5N120CN Datasheet PDF : 7 Pages
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HGTP5N120CN, HGT1S5N120CNS
Typical Performance Curves Unless Otherwise Specified (Continued)
200 TJ = 150oC, RG = 25Ω, L = 5mH, VCE = 960V
100
TC VGE
75oC 15V
75oC 12V
110oC 15V
110oC 12V
50 TC = 75oC, VGE = 5V
IDEAL DIODE
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
20
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.75oC/W, SEE NOTES
10
1
2
3
5
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
35
VCE = 840V, RG = 25Ω, TJ = 125oC
70
30
60
ISC
25
50
20
40
15
10
10
30
tSC
11
12
13
14
VGE, GATE TO EMITTER VOLTAGE (V)
20
15
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
35
DUTY CYCLE < 0.5%, VGE = 12V
250µs PULSE TEST
30
25
20
TC = -55oC
TC = 150oC
15
TC = 25oC
10
5
0
0 1 2 3 4 5 6 7 8 9 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
80
DUTY CYCLE < 0.5%, VGE = 15V
70 250µs PULSE TEST
60
50
TC = -55oC
40
30
TC = 150oC
20
10
TC = 25oC
0
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3000
2500
2000
RG = 25Ω, L = 5mH, VCE = 960V
TJ = 150o, VGE = 15V, VGE = 12V
1500
1000
500
0
2
TJ = 25oC, VGE = 15V, VGE = 12V
3
4
5
6
7
8
9
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
1750
1500
1250
RG = 25Ω, L = 5mH, VCE = 960V
TJ = 150oC, VGE = 12V OR 15V
1000
750
500
TJ = 25oC, VGE = 12V OR 15V
250
0
1
2
3
4
5
6
7
8
9 10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTP5N120CN, HGT1S5N120CNS Rev. B
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