HAT1038R Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
HAT1038R Datasheet PDF : 8 Pages
| |||
HAT1038R, HAT1038RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• For Automotive Application (at Type Code "J")
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
78
DD
56
DD
87 65
1 234
2
4
G
G
S1
MOS1
S3
MOS2
Preliminary
REJ03G1150-0600
Rev.6.00
Aug 25, 2009
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
HAT1038R
HAT1038RJ
Avalanche energy
HAT1038R
HAT1038RJ
Channel dissipation
Channel dissipation
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IAP Note 4
EAR Note 4
Pch Note 2
Pch Note 3
–60
±20
–3.5
–28
–3.5
—
–3.5
—
1.05
2
3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
(Ta = 25°C)
Unit
V
V
A
A
A
—
A
—
mJ
W
W
°C
°C
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 1 of 7
Share Link: 