FLC01-200H Просмотр технического описания (PDF) - STMicroelectronics
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FLC01-200H Datasheet PDF : 11 Pages
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Characteristics
1
Characteristics
FLC01
Symbol
Table 2. Absolute ratings (limiting values)
Parameter
ITRM
IFRM
dl/dt
Tstg
Tj
Toper
TL
Repetitive surge peak on state current for thyristor
-30° C ≤ Tamb ≤ 120° C
Repetitive surge peak on state current for diode
-30° C ≤ Tamb ≤ 120° C
tp = 10 µs
(Figure 3)
Critical rate of rise time on state current -30° C ≤ Tamb ≤ 120° C
Storage junction temperature range
Maximum junction temperature
Operating temperature range
Maximum lead temperature for soldering during 10s
Symbol
Table 3. Thermal resistance
Parameter
Rth(j-a) Thermal resistance junction to ambient
Value
Unit
190
A
120
- 40 to + 150
+ 125
- 30 to + 120
260
A/µs
°C
°C
°C
Min.
100
° C/W
Figure 2. Electrical characteristics (definitions)
I
Sym bol= Parm eter
IF
VRM
VBO
VT
VF
IBO
IRM
= Stand-off voltage
= Breakover voltage
= On-state voltage
= Diode forward drop
= Breakover current
= Leakage current
VB O
V
VR M
T
VF
V
IR M
IB O
7T2 = Temperature coefficient for VBO
IT
Symbol
Table 4. Electrical characteristics: diode (D) parameter
Test Conditions
Value
VF
IF = 2 A tp ≤ 500 µs
Tj = 25° C
MAX
1.7
Table 5. Electrical characteristics: Thyristor (Th) and Zener (Z) parameters
Symbol
Test Conditions
Min.
Typ.
Max
IRM
VRM = 200 V
VBO
at IBO
IBO
at VBO
VT
IT = 2 A tp ≤ 500 µs
αT
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 25° C
Tj = 25° C
1
10
206
220
233
0.5
1.7
0.27
Unit
V
Unit
µA
µA
V
mA
V
V/° C
2/11
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