XD010-24S-D2F Просмотр технического описания (PDF) - RF Micro Devices
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XD010-24S-D2F Datasheet PDF : 6 Pages
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XD010-24S-
D2F(Y)
1930 MHz to
1990 MHz
Class A/AB
12 W CDMA
Driver Ampli-
fier
NOT FOR NEW DESIGNS
XD010-24S-D2F(Y)
1930 MHz to 1990 MHz CLASS A/AB 12 W
CDMA DRIVER AMPLIFIER
RFMD Green, RoHS Compliant, Pb-Free (Y Part Number)
Package: D
Product Description
Features
RFMD’s XD010-24S-D2F 12W power module is a robust 2-Stage Class Available in RoHS Compliant
A/AB amplifier module for use in the driver stages of CDMA RF power Packaging
amplifiers. The power transistors are fabricated using RFMD’s latest, high 50Ω RF Impedance
performance LDMOS process. This unit operates from a single voltage and
has internal temperature compensation of the bias voltage to ensure sta-
ble performance over the full temperature range. It is internally matched
S to 50Ω.
N Optimum Technology
Matching® Applied
IG GaAs HBT
GaAs MESFET
S InGaP HBT
SiGe BiCMOS
E Si BiCMOS
D SiGe HBT
Functional Block Diagram
tage 1
tage 2
Bias
Network
Temperature
Compensation
12W output P1dB
Single Supply Operation:
Nominally 28 V
High Gain: 28dB at 1960MHz
High Efficiency: 26% at
1960 MHz
Advanced, XeMOS II LDMOS
FETS
Temperature Compensation
Applications
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
9 LDMOS
1
RF in
2
3
W VD1
VD2
NE Case Flange = Ground
4
RF out
Base Station PA Driver
Repeater
CDMA
GSM/EDGE
Parameter
R Frequency of Operation
O Output Power at 1dB Compression
Gain
F Peak to Peak Gain Variation
Drain Efficiency
T Input Return Loss
O ACPR at 1W CDMA Power Output
N ALT-1 at 2W CDMA
Min.
1930
10
26
20
10
Specification
Typ.
12
28
0.4
26
12
6.5
14
-58
-70
Max.
1990
1.0
Unit
MHz
W
dB
dB
%
%
%
dB
dB
dB
Condition
1 W Output Power
1930 MHz to 1990 MHz
10 W CW Output
2 W CDMA (Single Carrier IS-95, 9 Ch Fwd)
1 W CDMA (Single Carrier IS-95, 9 Ch Fwd)
1 W Output Power, 1930 MHz to 1990 MHz
Single Carrier IS-95, 9 Ch FWD, Offset = 750 KHz,
ACPR Integrated Bandwidth
Single Carrier IS-95, 9 Ch FWD, Offset = 1980 KHz,
ACPR Integrated Bandwidth
Third Order IMD
-27
-32
dBc
10 W PEP (Two Tone; 1 MHz)
Signal Delay from Pin 1 to Pin 5
2.9
nS
Deviation from Linear Phase (Peak to
0.5
Deg
Peak)
Thermal Resistance Stage 1 (Junc-
11
tion to Case)
°C/W
Thermal Resistance Stage 2 (Junc-
4
tion to Case)
°C/W
Test Conditions: ZIN=ZOUT=50Ω VDD=28.0V IDQ1=230mA IDQ2=150mA TFLANGE=25°C
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-102932 Rev G
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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