PSB82 Просмотр технического описания (PDF) - Powersem GmbH
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PSB82 Datasheet PDF : 2 Pages
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PSB 82
200
[A]
150
100
50
Tvj = 150°C
IF
Tvj = 25°C
0
0.5 1 1.5 2
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
I-I-FF-S(-MO-V-)
1.6
IFSM (A)
TVJ=45°C TVJ=150°C
750
670
1.4
1.2
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
4
10
A2s
TVJ=45°C
3
10
TVJ=150°C
2
10
1
2
46
10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
200
[W] PSB 82
175
150
95
TC
0.35 0.22 = RTHCA [K/W] 100
0.47
105
110
125
100
75
50
25
PVTOT
0
10 30
IFAVM
0.73
1.23
DC
sin.180°
rec.120°
rec.60°
rec.30°
2.72
50 70 0
50
[A] Tamb
115
120
125
130
135
140
100
145
°C
150
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
80
[A]
60
40
DC
sin.180°
rec.120°
rec.60°
rec.30°
20
IdAV
0
50
100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
2
K/W
1.5
1
Z thJK
Z thJC
0.5
Zth
0.01
0.1 t[s] 1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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