AA032P1-00(2002) Просмотр технического описания (PDF) - Skyworks Solutions
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AA032P1-00 Datasheet PDF : 3 Pages
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30–36 GHz GaAs MMIC
Power Amplifier
Features
■ Single Gate and Drain Biases
■ 25 dBm Typical P1 dB Output Power
at 31 GHz
■ 11 dB Typical Small Signal Gain
■ 0.25 µm Ti/Pd/Au Gates
■ 100% On-Wafer RF and DC Testing
■ 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
0.120
1.143
AA032P1-00
0.000
0.107
1.143
Description
Skyworks’ two-stage reactively-matched Ka band GaAs
MMIC power amplifier has a typical P1 dB of 25 dBm with
10 dB associated gain and 15% power added efficiency
at 31 GHz. The chip uses Skyworks’ proven
0.25 µm MESFET technology, and is based upon MBE
layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate solder or epoxy die attach
processes. Single gate and drain bias pads cover both
stages, with the added convenience that the chip can be
wire bonded from either side for either bias. All chips are
screened for gain, output power, efficiency and
S-parameters prior to shipment for guaranteed
performance. A broad range of applications exist in both
the military and commercial areas where high power and
gain are required.
2.166
2.179
2.285
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (TC)
Storage Temperature (TST)
Bias Voltage (VD)
Power In (PIN)
Junction Temperature (TJ)
Value
-55°C to +90°C
-65°C to +150°C
7 VDC
22 dBm
175°C
Electrical Specifications at 25°C (VDS = 6 V, VGS = -1 V)
Parameter
Condition
Symbol
Min. Typ.3 Max. Unit
Drain Current (at Saturation)
IDS
400
450
mA
Small Signal Gain
F = 30–31, 34–36 GHz
G
8
11
dB
Input Return Loss
F = 30–31, 34–36 GHz
RLI
-7
-6
dB
Output Return Loss
F = 30–31, 34–36 GHz
RLO
-8
-6
dB
Output Power at 1 dB Gain Compression
F = 31 GHz
P1 dB
24
25
dBm
Saturated Output Power
F = 31 GHz
PSAT
25
27
dBm
Gain at Saturation
Two-Tone Output Third-Order Intercept1
F = 31 GHz
F = 31 GHz
GSAT
OIP3
8
dB
34
dBm
Thermal Resistance2
ΘJC
42
°C/W
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email sales@skyworksinc.com • www.skyworksinc.com
1
Specifications subject to change without notice. 11/02A
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