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DTA124EUA Просмотр технического описания (PDF) - Willas Electronic Corp.

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DTA124EUA
Willas
Willas Electronic Corp. Willas
DTA124EUA Datasheet PDF : 2 Pages
1 2
WILLAS
FM120-M+
DTA124EUA THRU
PNP Digital Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Features Low profile surface mounted application in order to
optimize board space.
Pb-FreeLopwapcokwaegr leosiss, haivghaielfafibcileency.
High current capability, low forward voltage drop.
RoHSpHriogdhuscurtgfeorcappaacbkiliintyg. code suffix ”G”
SOD-123H
SOT-323 0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
HalogenGufraerderipngrofodruocvtefrovor lptaagcekpirnogteccotiodne. suffix “H”
EpoxymUelteratshiUghL-s9p4eeVd-0swfliatcmhimnga. bility rating
MoisureSSiliecnonsietipviittayxLiael vpelaln1ar chip, metal silicon junction.
Built-inbLieaasdr-efrseiestpoarrstsemneaebtleenthvierocnomnefnigtaulrasttaionndaorfdas nofinverter circuit
without cRMooInHLn-SSepTcrDotid-n1ugc9t5ef0ox0rtep/r2anc2ak8ilnigncpoudterseusffiisxto"Grs"
The biasHarelosgiesntofrresecporondsuisctt foorf pthaicnk-infiglmcordeessisuftfoixrs"Hw" ith complete
isolatioMn teocahlloawnniecgaaltivdeabtiaasing of the input. They also have the
advantage of almost completely eliminating parasitic effects.
Only theEopno/xoyf:f UcoL9n4d-iVtio0nrastendeefladmtoe rbeetasrdeat nfot r operation, making
devicedCeassigen: Meaolsdyed plastic, SOD-123H
,
AbsolutemTearxmiminaulsm:Prlaatteindgtesrm@in2a5lsк, solderable per MIL-STD-750
0.031(0.8) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
Symbol
MPeatrhaomde2te0r26
Min Typ Max Unit
VCC SPuoplpalryitvyo:ltIangdeicated by cathode band --- -50 ---
V
Dimensions in inches and.0(m87ill(im2.e2t0e)rs)
VIN
IO
IC(MAX)
Input voltage
Mounting Posi
tion
:
Any
-40
Output current
Weight : Approximat
ed
0.011
gram
---
---
-30
-100
10
---
V
mA
.070(1.80)
Pd
Power dissipation
--- 200 ---
mW
Tj
JunctionMteAmXpeIMraUturMe RATINGS AND E---LEC1T5R0ICA-L--CHARćACTERISTICS
TRstgatings aStto2r5age taemmbpieernattuteremperature unless other-w55ise spe--c-ified.150
ć
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Electrical Characteristics @ 25к
RATINGS
SyVVMMmII((aaboofnrxfo))kimilnugmCoRIndepecuutrvreonlttaPgeeaP((kVVaRCOrCa=e=mv--0e5e.r2VstVee, r,IVOI=Oo=-lt1a-50gm0e­A)A)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-.M0H56F(1M.14800)-MH FM1100-MH FM1150-MH FM1200-M
Min Typ
-0.5 ---
--V- RRM ---
1220M--3a-.-x0
1330UnVVit
14
40
15
50
16 .047(1.2108)
60
80
10
100
115 120
150
200
VMOa(oxn)imum ROMutSpuVtovltoalgtaeg= e (IO/II -10mA/-0.5mA
--V- RMS --- 14 -0.3 21 V 28
35
42
56
70
105
140
MIaI xim= um DInCpuBtloccukrrinegntV(oVlIta-g5eV)
IO(off)
Output current (VCC= =-50V, VI 0)
MGaIximum ADvCercaugrereFnotrgwaainrd(RVOe=ct-i5fiVe= d, ICOu-r5remnAt )
---VDC
---
---
---
20 -0.36 30 mA
-0.5 ­A
40
50
60
80
100
150
200
56 IO ---
---
.004(0.10)1M.0AX.
RPR2e/R1ak1
Input resistance
ForwaRrdesSiusrtgaencCeurrraetniot
8.3
ms
single
half
sine-wave
15.4
0.8IFSM
22
1.0
sTufyTppeicriaml pTohseT(eVrrdmaOona=nsl -iRrt1aioe0tensVdis,flrtIoeaOa=nqdc5ue(meJnE(ANcD,yoEft=eC12m0)0eMthHodz))
--- 250
RΘJA
Typical Junction Capacitance (Note 1)
CJ
28.6 K¡
1.2
--- MHz
30
40
.016(0.40)
120 .008(0.20)
Operating Temperature Range
TJ
-55 to +125
-55 to +150
Storage Temperature Range
TSTG
Dime-n6si5ontos+in17in5ches and (millimeters)
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM1S60u-MgHgFeMs1t8e0d-MHSFoMld11e0r0-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
VF
Maximum Average Reverse Current at
@*TMA=a2r5king:
15
IR
Rated DC Blocking Voltage
@T A=125℃
0.50
0.70 Pad Lay0o.8u5t
0.9
0.92
00..750
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.90
1.90 mm
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.

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