DTA114TCA Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

DTA114TCA

Digital Transistor

Galaxy Semi-Conductor 

Production specification

Digital Transistor

DTA(R1-only SERIES)CA

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-Base breakdown Voltage

Collector-Emitter breakdown Voltage

Emitter-Base breakdown Voltage

Collector cutoff Current

Emitter cutoff Current

Collector-Emitter saturation voltage

DTA114TCA

DTA143TCA

DTA144TCA

DC Current Gain

Input Resistor(R1)

DTA114TCA

DTA143TCA

DTA144TCA

Input Resistor(R1)Tolerance

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

R1

∆R1

Gain-Bandwidth Product

fT

IC=-50μA

IC=-1mA

IE=-50μA

VCB=-50V

VEB=-4V

-50

-50

-5

-

-

-

-

V

V

V

-0.5 μA

-0.5 μA

IC/IB=-1mA/-0.1mA

IC/IB=-2.5mA/-0.25mA

IC/IB=-2.5mA/-0.25mA

IC=-1mA,VCE=-5V

100 250

7

10

3.19 4.7

31.9 47

-30

VCE=-10V,IE=-5mA,

-

250

f=100MHz

-0.3 V

600

13

6.11 KΩ

61.1

+30 %

-

MHz

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

C049

Rev.A

www.gmesemi.com

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