KSE172 Просмотр технического описания (PDF) - Fairchild Semiconductor
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KSE172 Datasheet PDF : 5 Pages
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KSE170/171/172
Low Power Audio Amplifier
Low Current, High Speed Switching Applications
PNP Epitaxial Silicon Transistor
1
TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
: KSE170
: KSE171
: KSE172
Value
- 60
- 80
- 100
VCEO
Collector-Emitter Voltage
: KSE170
- 40
: KSE171
- 60
: KSE172
- 80
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
-7
-3
-6
-1
12.5
1.5
150
- 65 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
BVCEO
Collector-Emitter Breaksown Voltage
: KSE170 IC = 10mA, IB = 0
-40
: KSE171
-60
: KSE172
-80
ICBO
Collector Cut-off Current
: KSE170
: KSE171
: KSE172
: KSE170
: KSE171
: KSE172
VCB = - 60V, IB = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
VCB = - 60V, IE = 0, TC = 150°C
VCB = - 80V, IE = 0, TC = 150°C
VCB = - 100V, IE = 0, TC = 150°C
IEBO
Emitter Cut-off Current
VBE = - 7V, IC = 0
hFE
DC Current Gain
VCE = - 1V, IC = - 100mA
50
VCE = - 1V, IC = - 500mA
30
VCE = - 1V, IC = - 1.5A
12
VCE(sat)
Collector-Emitter Saturation Voltage
IC = - 500mA, IB = - 50mA
IC = - 1.5A, IB = - 150mA
IC = - 3A, IB = - 600mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = - 1.5A, IB = - 150mA
IC = - 3A, IB = - 600mA
VBE(on)
Base-Emitter On Voltage
VCE = - 1V, IC = - 500mA
fT
Current Gain Bandwidth Product
VCE = - 10V, IC = - 100mA
50
Cob
Output Capacitance
VCB = - 10V, IE = 0, f = 0.1MHz
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
V
-0.1 µA
-0.1 µA
-0.1 µA
-0.1 mA
-0.1 mA
-0.1 mA
-0.1 µA
250
-0.3
V
-0.9
V
-1.7
V
-1.5
V
-2.0
V
-1.2
V
MHz
50 pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
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