KSC5367
High Voltage and High Reliability
• High speed Switching
• Wide Safe Operating Area
• High Collector Base Voltage
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current
IBP
*Base Current (Pulse)
PC
Power Dissipation(Tc=25)
TJ
Junction Temperature
TSTG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Value
1600
800
12
3
6
2
4
80
150
- 65 ~ 150
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Characteristics
Rθjc
Thermal Resistance
Junction to Case
Rθja
Junction to Ambient
Rating
1.56
62.5
Units
V
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001