KSC5603D Просмотр технического описания (PDF) - Fairchild Semiconductor
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KSC5603D Datasheet PDF : 5 Pages
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Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO Collector-Base Breakdown
Voltage
IC=0.5mA, IE=0
BVCEO Collector-Emitter Breakdown
Voltage
IC=5mA, IB=0
BVEBO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
Cib
Cob
fT
VF
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
Diode Forward Voltage
IE=0.5mA, IC=0
VCES=1600V, IE=0
TA=25°C
TA=125°C
VCE=800V, VBE=0
TA=25°C
TA=125°C
VEB=12V, IC=0
VCE=3V, IC=0.4A
TA=25°C
TA=125°C
VCE=10V, IC=5mA TA=25°C
TA=125°C
IC=250mA, IB=25mA TA=25°C
TA=125°C
IC=500mA, IB=50mA TA=25°C
TA=125°C
IC=1A, IB=0.2mA
TA=25°C
TA=125°C
IC=500mA, IB=50mA TA=25°C
TA=125°C
IC=2A, IB=0.4A
TA=25°C
TA=125°C
VEB=10V, IC=0, f=1MHz
VCB=10V, IE=0, f=1MHz
IC=0.1A,VCE=10V
IF=0.4A
TA=25°C
TA=125°C
IF=1A
TA=25°C
TA=125°C
Min.
1600
800
12
20
6
20
20
Typ.
1689
870
14.8
0.01
0.01
0.05
29
15
43
46
0.5
1.5
1.2
0.74
0.61
0.85
0.74
745
56
5
0.76
0.83
Max. Units
V
V
V
100 μA
1000 μA
100 μA
1000 μA
500 μA
35
1.25
2.5
2.5
1.2
1.1
1.2
1.1
1000
500
1.2
1.5
V
V
V
V
V
V
V
V
V
V
pF
pF
MHz
V
V
V
V
© 2010 Fairchild Semiconductor Corporation
KSC5603D Rev. C2
2
www.fairchildsemi.com
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