KSA1242 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

KSA1242

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSA1242

Medium Power Amplifier

Camera Flash Applications

• hFE = 100~320 (VCE = -2V, IC = -0.5V)

• hFE = 70 (Min.) (VCE = -2V, IC = -4A)

• Low Saturation Voltage: VCE(sat) = -1V (Max.)

1

I-PAK

1. Base 2. Collector 3. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

ICP

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Collector Dissipation (TC=25°C)

Junction Temperature

Storage Temperature

Ratings

- 35

- 20

-8

-5

-8

10

150

- 55 ~ 150

Units

V

V

V

A

A

W

°C

°C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCEO

BVEBO

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(on)

fT

Cob

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Collector Output Capacitance

IC = - 10mA, IB = 0

IE = - 1mA, IC = 0

VCB = - 35V, IE = 0

VEB = - 8V, IC = 0

VCE = - 2V, IC = - 0.5A

VCE = - 2V, IC = - 4A

IC = - 4A, IB = - 0.1A

VCE = - 2V, IC = - 4A

VCE = - 2V, IC = - 0.5A

VCB = - 10V, f = 1MHz

Min.

- 20

-8

100

70

Typ.

180

50

Max.

- 100

- 100

320

Units

V

V

µA

µA

-1

- 1.5

V

V

MHz

pF

hFE Classification

Classification

hFE1

O

100 ~ 200

Y

160 ~ 320

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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