KSB810 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

KSB810

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

-50

IB = -250µA

-40

IB = -200µA

-30

IB = -150µA

-20

IB = -100µA

-10

IB = -50µA

0

0

-10

-20

-30

-40

-50

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

-1000

VBE(sat)

-100

VCE(sat)

IC=10IB

-10

-10

-100

IC[mA], COLLECTOR CURRENT

-1000

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000

100

VCE= -1V

10

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 2. DC current Gain

1000

100

VCE = -6V

10

1

-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 4. Current Gain Bandwidth Product

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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