KSB810 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

KSB810

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Audio Frequency Amplifier

• Complement to KSD1020

KSB810

1

TO-92S

1.Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

* Collector Current (Pulse)

PC

Collector Power Dissipation

TJ

Junction Temperature

TSTG

Storage Temperature

* PW≤10ms, Duty cycle≤50%

Ratings

-30

-25

-5.0

-700

-1.0

350

150

-55 ~ 150

Units

V

V

V

mA

A

mW

°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

hFE1

hFE2

* DC Current Gain

VBE (on) * Base-Emitter on Voltage

VCE (sat) * Collector-Emitter Saturation Voltage

VBE (sat) * Base-Emitter Saturation Voltage

Cob

Output Capacitance

fT

Current Gain Bandwidth Product

* Pulse Test: PW≤350µs, Duty cycle≤2%

VCB= -30V, IE=0

VEB= -5V, IC=0

VCE= -1V, IC= -100mA

VCE= -1V, IC= -700mA

VCE= -6V, IC= -10mA

IC= -700mA, IB= -70mA

IC= -700mA, IB= -70mA

VCB= -6V, IE=0, f=1MHz

VCE= -6V, IC=-10mA

Min.

70

35

-600

50

Typ.

200

100

-640

-0.25

-0.95

17

160

Max.

-100

-100

400

-700

-0.4

-1.2

40

Units

nA

nA

mV

V

V

pF

MHz

hFE Classification

Classification

hFE1

O

70 ~ 140

Y

120 ~ 240

G

200 ~ 400

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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