KSC2881 Просмотр технического описания (PDF) - KEXIN Industrial
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KSC2881 Datasheet PDF : 1 Pages
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SMD Type
Transistors
NPN Epitaxial Silicon Transistor
KSC2881
Features
Collector-Emitter Voltage : VCEO=120V
Current Gain Bandwidth Productor : fT=120MHz
Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
* Mounted on Ceramic Board (250mm2X0.8mm)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
PC*
TJ
TSTG
Rating
120
120
5
800
160
500
1,000
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Symbol
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (on)
fT
Cob
Testconditons
IC=10ìA, IB=0
IE=1mA, IC=0
VCB=120V, IE=0
VBE=5V, IC=0
VCE=5V, IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=5V, IC=100mA
VCB=10V, IE=0, f=1MHz
hFE Classification
Marking
Rank
Type
SCO
O
80 160
SCY
Y
120 240
Unit
V
V
V
mA
mA
mW
mW
Min Typ Max Unit
120
V
5
V
100 nA
100 nA
80
240
1.0 V
1.0 V
120
MHz
30 pF
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