KSC5321F Просмотр технического описания (PDF) - Fairchild Semiconductor
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KSC5321F Datasheet PDF : 5 Pages
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Cib
tON
tSTG
tF
tON
tSTG
tF
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Turn On Time
Storage Time
Fall Time
Turn On Time
Storage Time
Fall Time
IC = 1mA, IE = 0
IC = 5mA, IB = 0
IC =1mA, IC = 0
VCB = 800V, IE = 0
VEB = 7V, IC = 0
VCE = 5V, IC = 0.6A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.6A
IC = 3A, IB = 0.6A
VCE= 10V, IC = 0.6A
VCB = 10V, IE = 0, f = 1MHz
VEB = 7V, IC = 0, f = 1MHz
VCC = 250V, IC = 1A
IB1 = -IB2 = 0.2A
RL = 250Ω
VCC = 250V, IC = 4A
IB1 = 0.8A, IB2 = -1.6A
RL = 125Ω
Min.
800
500
7
-
-
15
8
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
14
65
1400
-
-
-
-
-
-
Max.
-
-
-
10
10
40
-
1.0
1.5
-
100
2000
0.5
6.5
0.3
0.5
3.0
0.3
Units
V
V
V
µA
µA
V
V
MHz
pF
pF
µs
µs
µs
µs
µs
µs
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
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