TN6727A Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

TN6727A

PNP General Purpose Amplifier

Fairchild Semiconductor 

PNP General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

BVCEO Collector-Emitter Breakdown Voltage

BVCBO Collector-Base Breakdown Voltage

BVEBO Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC = 10 mA

IC = 1 mA

IE = 1 mA

VCB = 50 V

VEB = 5 V

40

V

50

V

5

V

100 nA

100 nA

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

IC = 10 mA, VCE = 1 V

IC = 100 mA, VCE = 1 V

IC = 1A, VCE = 1 V

IC = 1 A, IB = 100 mA

IC = 1 A, VCE = 1 V

55

-

60

50 250

0.5

V

1.2

V

SMALL SIGNAL CHARACTERISTICS

Ccb

Output Capacitance

hfe

Small Signal Current Gain

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%

VCB = 10 V, IE = 0, f = 1MHz

30

pF

IC = 50 mA,VCE = 10 V, f=20MHz 2.5

25

-

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